PRX MG300J1US51 GTR Silicon N Channel IGBT Power Block Module

Description

PRX GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications The Electrodes are Isolated from Case High Input Impedance Includes a Complete Half Bridge in one Package Enhancement-mode High speed : tf= 0.30μs (Max.) (IC = 300A) trr= 0.15μs (Max.) (IF = 300A) l Low saturation voltage : VCE(sat) = 2.70V (Max.) (IC = 300A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC300 Collector current 1ms ICP 600 A DC IF300 Forward current 1ms I FM 600 A Collector power dissipation (Tc = 25°C) PC1300 W Junction temperature Tj 150 °C Storage temperature range Tstg−40 ~ 125 °C Isolation voltage V Isol 2500 (AC 1 minute) V Screw torque (Terminal / M4 / M6 / mounting) 2 / 3 / 3 N·m